Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
نویسندگان
چکیده
منابع مشابه
Surface reconstructions of cubic gallium nitride „001... grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions
Cubic GaN has been grown under gallium Ga -rich growth conditions using radio frequency nitrogen plasma molecular beam epitaxy on MgO 001 substrates. Reflection high energy electron diffraction patterns indicate the smoothness of the c-GaN surface and show 2 and even 8 periodicities after the growth at sample temperature Ts 200 °C and 1 1 at higher temperatures. Scanning tunneling microscopy im...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 1989
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.575869